Determination of funnel length from cross section versus LET measurementsGOLKE, K. W.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1910-1917, issn 0018-9499Conference Paper

Design considerations for a radiation hardened nonvolatile memoryMURRAY, J. R.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1610-1618, issn 0018-9499Conference Paper

One hundred percent abrupt failure between two radiation levels in step-stress testing of electronic partsNAMENSON, A; MYERS, D.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1709-1713, issn 0018-9499Conference Paper

Efficient β/γ Monte Carlo transport in repetitive structuresHALBLEIB, J. A; SCRIVNER, G. J.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1402-1408, issn 0018-9499Conference Paper

Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devicesCONLEY, J. F; LENAHAN, P. M.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1335-1340, issn 0018-9499Conference Paper

One gigarad passivating nitrided oxides for 100 % internal quantum efficiency silicon photodiodesKORDE, R; CABLE, J. S; CANFIELD, L. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1655-1659, issn 0018-9499Conference Paper

Three-dimensional numerical simulation of single event upset of an SRAM cellWOODRUFF, R. L; RUDECK, P. J.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1795-1803, issn 0018-9499Conference Paper

Altitude and latitude variations in avionics SEU and atmospheric neutron fluxNORMAND, E; BAKER, T. J.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1484-1490, issn 0018-9499Conference Paper

Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated processDELAUS, M; EMILY, D; MAPPES, B et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1774-1779, issn 0018-9499Conference Paper

MeV electron populations as measured on DMSPMULLEN, E. G; GUSSENHOVEN, M. S.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1479-1483, issn 0018-9499Conference Paper

Model for space charge evolution and dose in irradiated insulators at high electric fieldsFREDERICKSON, A. R; WOOLF, S; GARTH, J. C et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1393-1401, issn 0018-9499Conference Paper

Radiation exposure effects on the performance of an electrically trainable artificial neural network (ETANN)CASTRO, H. A; SWEET, M. R.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1575-1583, issn 0018-9499Conference Paper

Reliability effects of X-ray lithography exposures on submicron-channel MOSFETsLELIS, A. J; OLDHAM, T. R.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1367-1371, issn 0018-9499Conference Paper

The shape of heavy ion upset cross section curvesXAPSOS, M. A; WEATHERFORD, T. R; SHAPIRO, P et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1812-1819, issn 0018-9499Conference Paper

Total dose effect on ferroelectric PZT capacitors used as non-volatile storage elementsMOORE, R. A; BENEDETTO, J; ROD, B. J et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1591-1596, issn 0018-9499Conference Paper

Low temperature proton irradiation of GaAs MESFETsSHAW, G. J; XAPSOS, M. A; WEAVER, B. D et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1300-1306, issn 0018-9499Conference Paper

Numerical analysis of single event burnout of power MOSFETsKUBOYAMA, S; MATSUDA, S; NAKAJIMA, M et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1872-1879, issn 0018-9499Conference Paper

On-chip p-MOSFET dosimetryBUEHLER, M. G; BLAES, B. R; SOLI, G. A et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1442-1449, issn 0018-9499Conference Paper

Practical approach to determining charge collected in multi-junction structures due to the ion shunt effectBROWN, A. O; BHARAT BHUVA; KERNS, S. E et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1918-1925, issn 0018-9499Conference Paper

Radiation response of silicon on diamond (SOD) devicesANNAMALAI, N. K; SAWYER, J; PRAMOD KARULKAR et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1780-1786, issn 0018-9499Conference Paper

Three-point method of prediction of MOS device response in space environmentsPERSHENKOV, V. S; BELYAKOV, V. V; CHEREPKO, S. V et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1714-1720, issn 0018-9499Conference Paper

5.5-MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broad-band LEDEVANS, B. D; HAGER, H. E; HUGHLOCK, B. W et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1645-1654, issn 0018-9499Conference Paper

Radiation-induced charge effects in buried oxides with different processing treatmentsPENNISE, C. A; BOESCH, H. E; GOETZ, G et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1765-1773, issn 0018-9499Conference Paper

Results from the high efficiency solar panel experiment flown on CRRESRAY, K. P; MULLEN, E. G; TRUMBLE, T. M et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1505-1511, issn 0018-9499Conference Paper

Singel-word multiple-bit upsets in static random access devicesKOGA, R; PINKERTON, S. D; LIE, T. J et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1941-1946, issn 0018-9499Conference Paper